cascadable silicon bipolar mmic amplifiers technical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 2.8 ghz ? 12.0 db typical gain at 1.0 ghz ? 10.0 dbm typical p 1db at 1.0 ghz ? unconditionally stable (k>1) ? hermetic gold-ceramic microstrip package MSA-0370 70 mil package typical biasing configuration c block c block r bias v cc > 7 v v d = 5 v rfc (optional) in out msa 4 1 2 3 description the MSA-0370 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a hermetic, high reliability package. this mmic is designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0370 absolute maximum ratings parameter absolute maximum [1] device current 80 ma power dissipation [2,3] 425 mw rf input power +13 dbm junction temperature 200 c storage temperature C65 to 200 c thermal resistance [2,4] : q jc = 125 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 8 mw/ c for t c > 147 c. 4. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 11.5 12.5 13.5 d g p gain flatness f = 0.1 to 1.8 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz 2.8 input vswr f = 0.1 to 3.0 ghz 1.8:1 output vswr f = 0.1 to 3.0 ghz 1.8:1 nf 50 w noise figure f = 1.0 ghz db 6.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 10.0 ip 3 third order intercept point f = 1.0 ghz dbm 23.0 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.5 5.0 5.5 dv/dt device voltage temperature coefficient mv/ c C8.0 notes: 1. the recommended operating current range for this device is 20 to 50 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 35 ma, z o = 50 w units min. typ. max. vswr
3 MSA-0370 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 35 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .13 C179 12.6 4.27 176 C18.6 .118 2 .09 C14 0.2 .13 C180 12.6 4.25 171 C18.3 .121 2 .10 C29 0.4 .12 C180 12.5 4.21 162 C18.4 .121 4 .12 C52 0.6 .11 C178 12.4 4.17 154 C18.2 .123 6 .14 C70 0.8 .11 C174 12.3 4.11 146 C17.8 .129 8 .17 C82 1.0 .10 C168 12.2 4.06 137 C17.7 .130 8 .20 C92 1.5 .11 C149 11.7 3.85 116 C17.1 .140 11 .24 C114 2.0 .16 C147 11.1 3.57 96 C16.2 .155 11 .27 C134 2.5 .22 C151 10.3 3.27 82 C15.6 .167 14 .27 C146 3.0 .28 C160 9.3 2.91 65 C15.2 .174 11 .27 C159 3.5 .33 C169 8.2 2.58 48 C14.5 .188 7 .26 C163 4.0 .36 C177 7.1 2.27 34 C14.3 .192 3 .25 C162 5.0 .38 163 5.1 1.81 9 C13.8 .203 C5 .23 C153 6.0 .39 132 3.4 1.48 C14 C13.5 .213 C13 .24 C160 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 35 ma. 0 2 4 6 8 10 12 14 gain flat to dc v d (v) figure 2. device current vs. voltage. 0 10 20 30 60 i d (ma) 0 2 34 56 1 40 50 t c = +125 c t c = +25 c t c = ?5 c i d (ma) figure 3. power gain vs. current. 4 6 8 10 12 14 g p (db) 15 25 30 40 50 35 20 5.5 5.0 6.0 6.5 7.0 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 0 3 6 9 12 15 18 p 1 db (dbm) i d = 50 ma i d = 20 ma i d = 35 ma 4 5 6 7 11 8 9 10 11 12 13 ?5 ?5 +25 +85 +125 p 1 db (dbm) nf (db) g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. mounting surface temperature, f = 1.0 ghz, i d = 35 ma. nf g p p 1 db 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz i d = 20 ma i d = 35 ma i d = 50 ma
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies obsoletes 5965-9569e 5966-4953e (11/99) 70 mil package dimensions 1 3 4 2 ground ground rf output and bias rf input .020 .508 .070 1.78 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .035 .89 .004 .002 .10 .05
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